?2010 fairchild semiconductor corporation 1 www.fairchildsemi.com FGPF4533 rev. b FGPF4533 330v, pdp trench igbt august 2010 absolute maximum ratings symbol description ratings units v ces collector to emitter voltage 330 v v ges gate to emitter voltage 30 v i c pulse(1)* collector current @ t c = 25 o c 200 a p d maximum power dissipation @ t c = 25 o c 28.4 w maximum power dissipation @ t c = 100 o c 11.4 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c thermal characteristics symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case - 4.4 o c/w r ja thermal resistance, junction to ambient - 62.5 o c/w notes: (1) half sine wave, d < 0.01, pluse width < 5 sec * ic_pluse limited by max tj FGPF4533 330v, pdp igbt to-220f (retractable) g e c features ? high current capability ? low saturation voltage: v ce (sat) =1.55 v @ ic = 50 a ? high input impedance ? fast switching ? rohs compliant applications ? pdp system general description using novel trench igbt technology, fairchild?s new series of trench igbts offer the optimum performance for pdp applica - tions where low conduction and swit ching losses are essential.
2 www.fairchildsemi.com FGPF4533 rev. b FGPF4533 330v, pdp trench igbt package marking and ordering information device marking device package packaging ty pe qty per tube max qty pe r box FGPF4533 FGPF4533tu to-220f tube 50ea - electrical characteris tics of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 330 - - v bv ces t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 a - 0.3 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 100 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 a, v ce = v ge 2.4 3.3 4.0 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v - 1.15 - v i c = 50a , v ge = 15v, t c = 25 o c - 1.55 1.8 v i c = 50a , v ge = 15v, t c = 1 25 o c - 1.6 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1294 - pf c oes output capacitance - 57 - pf c res reverse transfer capacitance - 41 - pf switching characteristics t d(on) turn-on delay time v cc = 200v, i c = 20a r g = 5 , v ge = 15v resistive load, t c = 25 o c - 6 - ns t r rise time - 22 - ns t d(off) turn-off delay time - 40 - ns t f fall time - 220 - ns t d(on) turn-on delay time v cc = 200v, i c = 20a, r g = 5 , v ge = 15v, resistive load, t c = 125 o c - 6 - ns t r rise time - 24 - ns t d(off) turn-off delay time - 42 - ns t f fall time - 277 - ns q g total gate charge v ce = 200v , i c = 20a v ge = 15v - 44 - nc q ge gate to emitter charge - 6 - nc q gc gate to collector charge - 14 - nc
3 www.fairchildsemi.com FGPF4533 rev. b FGPF4533 330v, pdp trench igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 0123456 0 50 100 150 200 12v 20v t c = 25 o c 15v 10v v ge = 8v collector current, i c [a] collector-emitter volta g e , v ce [ v ] 0123456 0 50 100 150 200 12v 10v 20v t c = 125 o c 15v v ge = 8v collector current, i c [a] collector-emitter volta g e , v ce [ v ] 012345 0 50 100 150 200 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 024681012 0 50 100 150 200 common emitter v ce = 10v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 0 20 40 60 80 100 120 140 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 50a 30a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 0 4 8 121620 0 4 8 12 16 20 30a i c = 20a 50a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
4 www.fairchildsemi.com FGPF4533 rev. b FGPF4533 330v, pdp trench igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. 0 4 8 121620 0 4 8 12 16 20 i c = 20a 50a 30a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0.1 1 10 0 400 800 1200 1600 2000 2400 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0153045 0 3 6 9 12 15 common emitter t c = 25 o c 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 1000 0.01 0.1 1 10 100 500 single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 1ms 10 ms dc 10 p s 100 p s collector current, i c [a] collector-emitter voltage, v ce [v] 0 1020304050 1 10 100 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ : ] 0 1020304050 10 100 1000 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ : ] gate resistance gate resistance
5 www.fairchildsemi.com FGPF4533 rev. b FGPF4533 330v, pdp trench igbt typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current figure 17. turn off switching soa characteristics 10 20 30 40 50 1 10 100 common emitter v ge = 15v, r g = 5 : t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 10 20 30 40 50 10 100 400 common emitter v ge = 15v, r g = 5 : t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 0 1020304050 10 100 1000 5000 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c e on e off switching loss [uj] gate resistance, r g [ : ] 10 20 30 40 50 1 10 100 1000 common emitter v ge = 15v, r g = 5 : t c = 25 o c t c = 125 o c e on e off switching loss [uj] collector current, i c [a] 1 10 100 500 0.1 1 10 100 500 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v]
6 www.fairchildsemi.com FGPF4533 rev. b FGPF4533 330v, pdp trench igbt typical performance characteristics figure 18.transient thermal impedanc e of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 8 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
7 www.fairchildsemi.com FGPF4533 rev. b FGPF4533 330v, pdp trench igbt dimensions in millimeters package dimensions dimensions in millimeters to-220f (retractable) * front/back side isolation voltage : ac 2700v
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